SPT (SPP Technologies Co., Ltd.), headquartered in Japan and part of Sumitomo Precision Products, has a strong heritage in semiconductor and MEMS manufacturing equipment, with a particular focus on advanced single-wafer etching and deposition technologies. The company develops and manufactures high-performance process equipment for MEMS, power semiconductors, compound semiconductors, photonics and advanced packaging applications.
SPT is particularly recognized for its silicon deep reactive ion etching (Si DRIE) technology based on the Bosch process, enabling high-aspect-ratio and deep silicon structures with precise profile control and excellent uniformity. Its single-wafer portfolio also includes etching solutions for SiC, compound semiconductors and oxide films, sacrificial-layer etching systems, and PECVD equipment for oxide and nitride films.
Together, these technologies provide flexible process solutions from R&D and prototyping through to high-volume manufacturing, supporting applications including MEMS sensors and actuators, power devices, compound semiconductors, LED and photonic devices, and advanced packaging. SPT combines proprietary plasma technology with application expertise to deliver customized single-wafer process solutions for increasingly complex device structures.
SILICON ETCHING
Predeus/Proxion Si Deep RIE
Mass-production silicon deep etching equipment
A mass-production silicon deep etching equipment for MEMS and semiconductor applications, established by adding proprietary technologies to the Bosch process.
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Achieving the world’s highest selectivity and etch rate while maintaining vertical etching profiles, sidewall roughness, and CD (critical dimension) loss.
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Realizing a wide range of etching profiles through a comprehensive process library.
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Applicable to semiconductor applications such as power MOSFETs and through-silicon vias (TSVs) on 200mm and 300mm wafers.
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Offering a range of transport systems from vacuum load-lock types to cluster types, suitable for both research and development as well as mass production.
300mm Si Deep RIE
High-volume production silicon deep etching equipment
System for high-volume production Si Deep RIE System for 300mm wafer, applications include:
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MEMS
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TSV
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LED
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RF
OTHER ETCHING
Spica/Sirius
Other material etching
Etching equipment for challenging materials (SiC, compound/oxide film), including compound semiconductors and optical devices.
Vetelgeuse
Sacrificial Layer Etching
SiO2 Sacrificial Layer Etching System with Fluoride (HF) and Ammonia (NH3) for MEMS industry, e.g., Accelerometer, Gyro sensor, Pressure sensor, Silicon microphone, Silicon resonator, Optical switch. Features:
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Capable of etching structures containing aluminum electrodes without corroding the aluminum
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Capable of microfabrication and long undercut in millimeter
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Capable of no waste liquid treatment, low frequency maintenance and high stability by Dry process
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Capable of R&D use and Mass Production use by wide Plat Form line up from simple manual type to cluster type
Deposition (PECVD)
Cetus
Oxide/nitride film deposition
SiO2/SiN PECVD plasma deposition equipment for forming low-stress silicon nitride films and thick silicon oxide films (SiO2, SiN, SiON, SiC), applications include:
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MEMS
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TSV
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LED
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RF
Capella
Low Temperature Oxide/nitride film deposition
Capella offer low temperature film deposition (≦ 100°C), mainly for SiO2 and SiN layers, designed for MEMS, optical coatings, and passivation films across a wide range of thicknesses.
