The JVX7300F is the latest generation X-ray Fluorescence (XRF) tool from Bruker. It includes all features of the JVX6200iF, which is the tool of record at many fabs, and extends the metrology capabilities for advanced micro-bump and Under Bump Metallization (UBM) processes. The JVX7300F allows the non-destructive thickness, and composition measurement, of smaller features than previous generations of XRF tools with enhanced productivity, improved ease-of-use and maintainability.
JVX7300HR: The JVX7300HR extends the capabilities of previous High-Resolution X-ray Diffraction (HRXRD) and X-ray Reflectivity (XRR) platforms to meet advanced node challenges. JVX7300HR delivers full stack analysis with higher throughput, smaller feature dimensions, and improved tool-to-tool matching, as well as enhanced user interface, ease-of-use and lower cost of ownership (COO). The Bruker-JVX7300HR is a state of the art X-ray metrology platform, targeting the most advanced technology nodes and challenging processes, mainly of FEOL applications:
JVX7300LSI: The JVX7300LSI was designed for in-fab R&D and in-line production process monitoring of semiconductors materials. It enables fully automated characterisation of many advanced materials in the semiconductor industry. The system provides scanning HRXRD, XRR, WA-XRD for sub 20nm Si logic R&D, process development and production process monitoring on blanket and patterned wafers. Featuring fully automated source optics, the system can switch between standard XRD, High-Resolution, and X-ray reflectivity modes without user intervention, even within the same recipe batch. Full automation of the alignment, measurement, analysis and reporting of the results ensures productive and fast characterisation of thin films. The standard configuration is the JVX7300L, which implements Scanning HRXRD, XRR, XRD, GI-XRD and WA-XRD. To allow in-plane XRD measurements, the optional I channel can be added. For HRXRD of patterned structures, the M channel can be added (JVX7300LMI). This allows the measurement of test structures on patterned wafers, with full pattern recognition. The optional S channel is specifically designed for HRXRD of standard and advanced epitaxy on metrology pads (<100µm pads), e.g. LED or power transistor applications.